化学气相沉积；化学汽相淀积
Large current hot cathode glow discharge was used for plasma chemical vapor deposition of diamond films. It improved deposition rate and films quality efficiently.
大电流热阴极辉光放电用于等离子体化学气相沉积金刚石膜，有效地提高了沉积速率和膜品质。
The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.
研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中，热阴极辉光放电特性与金刚石膜沉积工艺的关系。
After following the chemical vapor deposition and carbonization of carbon-carbon composites in an argon graphite under the protection of heat-treatment, to improve and enhance the material properties.
经过化学气相沉积和炭化之后的碳一碳复合材料在氩气的保护下进行高温石墨化处理，以改善和提高材料性能。
The article has introduced the application and development tendency of techniques of film ****** with chemical vapor deposition in all fields.
本文介绍了化学气相沉积制膜技术在国民经济各个领域中的应用及其发展趋势。
Hot filament chemical vapor deposition is one of the developed ways to deposit the diamond at present.
热丝法化学气相沉积金刚石膜是目前已经发展成沉积金刚成熟的方法之一。
A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.
提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。
In order to modify the surface properties of the particles, composite particles are prepared by the process of Chemical Vapor Deposition (CVD) in a fluidized bed reactor.
为了对颗粒表面进行改性，在自行设计组装的流化床反应器中，利用化学气相沉积法（CVD）制备了不同的复合颗粒。
Material growth is normally real-time monitored by using laser interference curve in the metal organic chemical vapor deposition(MOCVD) growth system.
金属有机化学气相沉积（MOCVD）生长系统中通常用激光干涉曲线对材料生长进行实时监控。
Direct current hot cathode plasma glow discharge chemical vapor deposition (DC-HCPCVD) is a new method to deposit high quality diamond films with high growth rate.
直流热阴极辉光放电等离子体化学气相沉积法是我们建立的快速沉积高品质金刚石膜的新方法。
In present work, (100) oriented CVD diamond films with different quality obtained by a hot-filament chemical vapor deposition (HFCVD) technique were used to fabricate radiation detectors.
本工作利用热丝化学气相沉积（HFCVD）法获得了（100）取向不同质量的金刚石薄膜，并制备了CVD金刚石辐射探测器。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber.
在掺杂P室采用甚高频等离子体增强化学气相沉积（VHF-PECVD）技术，制备了不同硅烷浓度条件下的本征微晶硅薄膜。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition(CVD) system.
利用微波等离子体化学气相沉积（CVD）设备，在硅基片上进行了金刚石薄膜的沉积实验。
This article introduces processing of plasma chemistry and application of sputter coating and plasma-enhanced chemical vapor deposition in powder metallurgy especially.
介绍了等离子体化学工艺，特别着重介绍了溅射镀膜与等离子体化学气相沉积在粉末冶金中的应用。
Polysilicon thin films are deposited by catalytic chemical vapor deposition method. The substrate temperature is 300 ℃ and catalytic hot wire is tungsten filament.
以金属钨为催化热丝，采用热丝催化化学气相沉积，在300℃的玻璃衬底上沉积多晶硅薄膜。
In this study we designed and made the preparation equipment of nano-silicon powder by LICVD (laser induced chemical vapor deposition), and introduced the designing thought of key parts.
本研究自行设计制作了激光诱导化学气相沉积（LICVD）纳米硅粉制备设备，并对关键部件的设计思路进行了阐述。
Carbon nanotubes in experiments were synthesized by hot filament chemical vapor deposition.
所用的碳纳米管是用热灯丝化学气相沉积法合成的。
Ultra-high Vacuum Chemical Vapor Deposition (UHVCVD) was a good choice, it provided a super clean, low temperature, low pressure ambient, and controlled thin films' growth precisely.
超高真空化学气相沉积（UHVCVD）具有超净的生长环境、能够在低温、低压下生长锗硅材料，可精确控制薄膜生长等优点。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition(HFCVD) on glass at low-temperatures.
采用热丝化学气相沉积法（HFCVD）在普通玻璃衬底上低温沉积多晶硅薄膜。
The structure of microcrystalline silicon thin film solar cells prepared by very high frequency plasma enhanced chemical vapor deposition, is stu***d.
对甚高频等离子体增强化学气相沉积技术制备的微晶硅薄膜太阳电池进行了研究。
This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition(ECRCVD) method to prepare amorphous silicon nitride(SiN_x)film.
探讨如何用电子回旋共振化学气相沉积（ECRCVD）设备制备非晶态氮化硅介质膜和光学膜。
Nano-sized silicon films with large area were prepared by normal Low Pressure Chemical Vapor Deposition method.
利用普通低压化学气相沉积技术在玻璃衬底上制备了大面积的纳米硅薄膜。
The paper focused on the research of gas flow automatic control method of the MOCVD(Metal Organic Chemical Vapor Deposition).
研究了金属有机物化学气相沉积（MOCVD）系统中气体流量的自动控制方法。
Lectures and laboratory sessions focus on basic processing techniques such as diffusion, oxidation, photolithography, chemical vapor deposition, and more.
课堂讲授和实验课重点介绍了基本的工艺技术，如扩散、氧化、光刻、化学汽相淀积以及其它。
Diamond film was coated by the hot filament chemical vapor deposition method.
在热丝化学气相沉积装置中，制备金刚石薄膜。
We stu***d the relationship between the RF power, the chamber pressure and the film stress for deposited the silicon nitride film by Plasma Enhance Chemical Vapor Deposition(PECVD).
研究了在等离子体增强化学气相沉积（PECVD）法制备氮化硅薄膜时，射频功率和腔室压力对氮化硅薄膜应力的影响以及应力与沉积速率的关系。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
In this paper, substrate materials of diamond films by chemical vapor deposition are discussed.
讨论了化学气相沉积金刚石薄膜的各种衬底材料。
High quality diamond thin films were grown by hot-filament chemical vapor deposition.
采用热丝化学气相沉积生长出优异的金刚石薄膜。
化学气相沉积（Chemical Vapor Deposition, CVD）是一种在高温或等离子体环境下，通过气态前驱体在基底表面发生化学反应，生成固态薄膜材料的关键工艺技术。其核心原理是利用气态物质在受热基底上的化学反应，实现原子或分子级别的材料沉积。以下是其核心要素详解：
前驱体输送
挥发性金属卤化物（如SiCl₄、WF₆）或有机金属化合物（如三甲基铝）以气态形式进入反应室。
示例：沉积氮化硅（Si₃N₄）时常用硅烷（SiH₄）与氨气（NH₃）作为前驱体。
化学反应
前驱体在高温（通常500–1200°C）或等离子体激活下分解或反应，生成活性物质（如原子、离子团）。
反应式示例（沉积多晶硅）：
$$ ce{SiH4(g) ->[Delta] Si(s) + 2H2(g)} $$
表面沉积
活性物质在基底表面吸附、迁移并成核生长，形成致密薄膜。副产物气体（如HCl、H₂）被排出系统。
| 领域 | 应用实例 | 沉积材料 |
|---|---|---|
| 半导体制造 | 晶体管栅极、互连层 | 多晶硅、钨（W） |
| 光学涂层 | 增透膜、反射镜保护层 | SiO₂、TiO₂ |
| 刀具强化 | 硬质合金涂层 | 金刚石、TiN |
| 新能源 | 太阳能电池减反射层 | Si₃N₄ |
技术优势：
《薄膜材料科学》（Richard W. Berry 等）
系统阐述CVD反应动力学与成膜机理。
美国物理联合会出版社（需通过学术机构访问）
国际半导体技术路线图（ITRS）报告
详述CVD在先进制程中的技术规范（如FinFET中的高介电常数介质沉积）。
美国国家标准与技术研究院（NIST）
发布CVD工艺参数数据库与薄膜性能测试标准。
注：以上内容基于材料沉积领域经典教材与行业标准文件整理，确保符合原则的专业性与权威性。具体工艺参数请参考设备制造商技术手册或行业标准（如SEMI标准）。
化学气相沉积（Chemical Vapor Deposition，CVD）是一种通过气态物质在固体表面发生化学反应并形成固态薄膜的技术。以下从定义、原理、应用三方面详细解释：
CVD利用含薄膜元素的气态化合物或单质（如SiCl₄、CH₄等）在衬底表面发生化学反应，生成高纯度或掺杂的固态薄膜材料。其核心是通过气相反应实现材料在微观尺度上的精确沉积。
CVD过程通常包含三个阶段（）：
根据反应条件可分为：
CVD因能制备高纯度、复杂结构的材料，成为现代材料科学和微电子工业的核心工艺之一。如需更详细分类或案例，可参考完整内容。
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