化學氣相沉積；化學汽相澱積
Large current hot cathode glow discharge was used for plasma chemical vapor deposition of diamond films. It improved deposition rate and films quality efficiently.
大電流熱陰極輝光放電用于等離子體化學氣相沉積金剛石膜，有效地提高了沉積速率和膜品質。
The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.
研究了在熱陰極輝光放電等離子體化學氣相沉積金剛石膜過程中，熱陰極輝光放電特性與金剛石膜沉積工藝的關系。
After following the chemical vapor deposition and carbonization of carbon-carbon composites in an argon graphite under the protection of heat-treatment, to improve and enhance the material properties.
經過化學氣相沉積和炭化之後的碳一碳複合材料在氩氣的保護下進行高溫石墨化處理，以改善和提高材料性能。
The article has introduced the application and development tendency of techniques of film ****** with chemical vapor deposition in all fields.
本文介紹了化學氣相沉積制膜技術在國民經濟各個領域中的應用及其發展趨勢。
Hot filament chemical vapor deposition is one of the developed ways to deposit the diamond at present.
熱絲法化學氣相沉積金剛石膜是目前已經發展成沉積金剛成熟的方法之一。
A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.
提出了一種新穎的多孔矽表面鈍化技術，即采用微波等離子體輔助的化學氣相沉積（MPCVD）方法在多孔矽上沉積金剛石薄膜。
In order to modify the surface properties of the particles, composite particles are prepared by the process of Chemical Vapor Deposition (CVD) in a fluidized bed reactor.
為了對顆粒表面進行改性，在自行設計組裝的流化床反應器中，利用化學氣相沉積法（CVD）制備了不同的複合顆粒。
Material growth is normally real-time monitored by using laser interference curve in the metal organic chemical vapor deposition(MOCVD) growth system.
金屬有機化學氣相沉積（MOCVD）生長系統中通常用激光幹涉曲線對材料生長進行實時監控。
Direct current hot cathode plasma glow discharge chemical vapor deposition (DC-HCPCVD) is a new method to deposit high quality diamond films with high growth rate.
直流熱陰極輝光放電等離子體化學氣相沉積法是我們建立的快速沉積高品質金剛石膜的新方法。
In present work, (100) oriented CVD diamond films with different quality obtained by a hot-filament chemical vapor deposition (HFCVD) technique were used to fabricate radiation detectors.
本工作利用熱絲化學氣相沉積（HFCVD）法獲得了（100）取向不同質量的金剛石薄膜，并制備了CVD金剛石輻射探測器。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber.
在摻雜P室采用甚高頻等離子體增強化學氣相沉積（VHF-PECVD）技術，制備了不同矽烷濃度條件下的本征微晶矽薄膜。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition(CVD) system.
利用微波等離子體化學氣相沉積（CVD）設備，在矽基片上進行了金剛石薄膜的沉積實驗。
This article introduces processing of plasma chemistry and application of sputter coating and plasma-enhanced chemical vapor deposition in powder metallurgy especially.
介紹了等離子體化學工藝，特别着重介紹了濺射鍍膜與等離子體化學氣相沉積在粉末冶金中的應用。
Polysilicon thin films are deposited by catalytic chemical vapor deposition method. The substrate temperature is 300 ℃ and catalytic hot wire is tungsten filament.
以金屬鎢為催化熱絲，采用熱絲催化化學氣相沉積，在300℃的玻璃襯底上沉積多晶矽薄膜。
In this study we designed and made the preparation equipment of nano-silicon powder by LICVD (laser induced chemical vapor deposition), and introduced the designing thought of key parts.
本研究自行設計制作了激光誘導化學氣相沉積（LICVD）納米矽粉制備設備，并對關鍵部件的設計思路進行了闡述。
Carbon nanotubes in experiments were synthesized by hot filament chemical vapor deposition.
所用的碳納米管是用熱燈絲化學氣相沉積法合成的。
Ultra-high Vacuum Chemical Vapor Deposition (UHVCVD) was a good choice, it provided a super clean, low temperature, low pressure ambient, and controlled thin films' growth precisely.
超高真空化學氣相沉積（UHVCVD）具有超淨的生長環境、能夠在低溫、低壓下生長鍺矽材料，可精确控制薄膜生長等優點。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition(HFCVD) on glass at low-temperatures.
采用熱絲化學氣相沉積法（HFCVD）在普通玻璃襯底上低溫沉積多晶矽薄膜。
The structure of microcrystalline silicon thin film solar cells prepared by very high frequency plasma enhanced chemical vapor deposition, is stu***d.
對甚高頻等離子體增強化學氣相沉積技術制備的微晶矽薄膜太陽電池進行了研究。
This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition(ECRCVD) method to prepare amorphous silicon nitride(SiN_x)film.
探讨如何用電子回旋共振化學氣相沉積（ECRCVD）設備制備非晶态氮化矽介質膜和光學膜。
Nano-sized silicon films with large area were prepared by normal Low Pressure Chemical Vapor Deposition method.
利用普通低壓化學氣相沉積技術在玻璃襯底上制備了大面積的納米矽薄膜。
The paper focused on the research of gas flow automatic control method of the MOCVD(Metal Organic Chemical Vapor Deposition).
研究了金屬有機物化學氣相沉積（MOCVD）系統中氣體流量的自動控制方法。
Lectures and laboratory sessions focus on basic processing techniques such as diffusion, oxidation, photolithography, chemical vapor deposition, and more.
課堂講授和實驗課重點介紹了基本的工藝技術，如擴散、氧化、光刻、化學汽相澱積以及其它。
Diamond film was coated by the hot filament chemical vapor deposition method.
在熱絲化學氣相沉積裝置中，制備金剛石薄膜。
We stu***d the relationship between the RF power, the chamber pressure and the film stress for deposited the silicon nitride film by Plasma Enhance Chemical Vapor Deposition(PECVD).
研究了在等離子體增強化學氣相沉積（PECVD）法制備氮化矽薄膜時，射頻功率和腔室壓力對氮化矽薄膜應力的影響以及應力與沉積速率的關系。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高頻等離子體增強化學氣相沉積技術成功地制備了不同矽烷濃度和輝光功率條件下的微晶矽電池。
In this paper, substrate materials of diamond films by chemical vapor deposition are discussed.
讨論了化學氣相沉積金剛石薄膜的各種襯底材料。
High quality diamond thin films were grown by hot-filament chemical vapor deposition.
采用熱絲化學氣相沉積生長出優異的金剛石薄膜。
化學氣相沉積（Chemical Vapor Deposition，CVD）是一種通過氣态物質在固體表面發生化學反應并形成固态薄膜的技術。以下從定義、原理、應用三方面詳細解釋：
CVD利用含薄膜元素的氣态化合物或單質（如SiCl₄、CH₄等）在襯底表面發生化學反應，生成高純度或摻雜的固态薄膜材料。其核心是通過氣相反應實現材料在微觀尺度上的精确沉積。
CVD過程通常包含三個階段（）：
根據反應條件可分為：
CVD因能制備高純度、複雜結構的材料，成為現代材料科學和微電子工業的核心工藝之一。如需更詳細分類或案例，可參考完整内容。
化學氣相沉積（Chemical Vapor Deposition，簡稱CVD）是通過在氣相中加熱化學反應物質從而在物體表面生成固态薄膜的一種化學加工技術。以下是對該詞彙的詳細解釋：
The thin film was deposited on the substrate using chemical vapor deposition.（利用化學氣相沉積在基闆上沉積了薄膜。）
化學氣相沉積是一種普遍用于生産半導體材料的技術。（Chemical vapor deposition is a commonly used technique for producing semiconductor materials.）
化學氣相沉積是一種用于制備薄膜的重要方法。它通常用于制備半導體材料、陶瓷材料、金屬材料、玻璃等材料的薄膜。化學氣相沉積技術可以通過控制反應物的濃度、溫度、氣壓等條件，來控制沉積薄膜的厚度、形貌和材料組成等特性。由于其高效、可控、重複性好等優點，CVD在微電子、光電子、材料科學等領域得到了廣泛的應用。
化學氣相沉積是一種化學加工技術，其原理是在反應室内将反應物質加熱至高溫，使其在氣态下分解産生活性物種，然後活性物種在基闆表面發生化學反應，形成固态薄膜。該方法的優點是可以制備高質量、均勻、可控的薄膜，并且可以在大面積、複雜形狀的基闆上沉積薄膜。
化學氣相沉積的近義詞包括化學氣相沉澱、化學氣相沉積法、化學氣相沉積技術等。
化學氣相沉積的反義詞為物理氣相沉積（Physical Vapor Deposition，簡稱PVD）。物理氣相沉積是通過在真空環境下将材料加熱到蒸發溫度，從而使得材料蒸發并沉積在基闆表面的一種技術。與CVD相比，PVD制備的薄膜具有高緻密性、高純度、低缺陷等特點。但相比之下，CVD技術可以制備出更加複雜、多樣化的薄膜，并且可以制備厚度更大的薄膜。
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