
[晶体] 多晶硅
Polycrystalline silicon solar energy cell, low cost, the highest conversion efficiency is 18% in the lab, is 12% in the industrial production.
多晶硅太阳能电池,成本低廉,其实验室最高转换效率为18%,工业规模生产的转换效率为12%。
The solar energy polycrystalline silicon having higher purity grew through melting and coagulating silicon powder with high power CW CO2 laser.
采用大功率连续CO2激光熔凝掳粉末,生长得到纯度较高的太阳能多晶硅材料。
The cost of crystalline silicon and polycrystalline silicon solar cell is high steadily, amorphous silicon and amorphous silicon thin film solar cell has optical-induced degradation .
单晶硅和多晶硅体太阳能电池成本居高不下,非晶硅和非晶硅薄膜太阳能电池又有光致衰退效应的困扰。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition(HFCVD) on glass at low-temperatures.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin film transistor has played a dominant role in the area of liquid display.
多晶硅薄膜晶体管以其独特的优点在液晶显示领域中起着重要的作用。
Boron is one of acceptor elements in polycrystalline silicon solar cells, which can influence the photo voltaic efficiency and stability of a solar cell.
硼是多晶硅太阳电池的受主元素,影响太阳电池的光电转换效率和稳定性。
The equipment adopts the technology of directional solidification, producing polycrystalline silicon ingots through melting and directional crystal growth in a period of approximate 60 hours.
该设备应用定向固化技术,经融化、定向晶体生长,通过60小时左右铸成多晶硅铸锭。
It is difficult to recycle a large amount of by product, silicon tetrachloride, which is the technical bottleneck existing in preparation of polycrystalline silicon by improved Siemens process.
改良西门子法制备多晶硅存在的技术瓶颈是大量副产物************难以回收利用。
An experimental results are reported here on the photoluminescence researched in terms of the solar battery made up of polycrystalline silicon.
报道了多晶硅太阳能电池材料的光致发光研究实验结果。
Heating chamber is pivotal part of the polycrystalline silicon ingot production furnace.
加热室是多晶硅铸锭炉的关键部件之一。
At present, the main have monocrystalline silicon solar cells, polycrystalline silicon, amorphous silicon 3 kinds.
目前,太阳能电池主要有单晶硅、多晶硅、非晶态硅三种。
The invention discloses a technology for the directional solidification growth of polycrystalline silicon ingot, belonging to the preparation of semiconductor material silicon crystal.
一种定向凝固生长多晶硅锭工艺,本发明属于半导体材料硅晶体的制备。
The separation process about deoxidizing stove tail gas in the modified siemens arts and crafts in polycrystalline silicon production was improved.
对改良西门子法多晶硅生产中尾气分离工艺进行了改进。
At last, we use the PC1D program to simulate polycrystalline silicon thin film solar cells prepared under high temperature.
最后,采用PC1D电池模拟软件对高温路线制备的多晶硅薄膜电池进行了理论模拟。
Technique process of growth of the polycrystalline silicon is based on the adjustment of the heating chamber.
多晶硅锭的生长工艺过程都要通过加热室的调整来实现。
Polycrystalline silicon thin film solar cell by RTCVD on SSP substrate is prepared so as to simplify the process and lower the cost.
从简化步骤、降低成本的角度出发,采用快速热化学气相沉积(RTCVD)法在低纯颗粒带硅(SSP)衬底上制备出了多晶硅薄膜太阳电池。
Polycrystalline silicon is a kind of form of monatomic silicon.
多晶硅是单质硅的一种形态。
Results show that the grain size of polycrystalline silicon thin films increased to several centimeters long and orders of millimeters width after ZMR.
研究结果表明:ZMR对籽晶层的区融、结晶效果比较理想,晶粒尺寸增大到厘米级长、毫米级宽;
Low temperature polycrystalline silicon thin film transistors(LTPS TFTs) are widely used in the flat panel displays.
低温多晶硅薄膜晶体管(LTPSTFT)广泛应用于平板显示。
OCI produces polycrystalline silicon, a raw material used in the production of solar panels.
奥瑟亚生产多晶硅——一种在制造太阳能电池板中用到的原料。
Subsequently, a second polycrystalline silicon layer doped with a second conductivity type dopant is deposited to cover the first polycrystalline silicon layer.
沉积一第二多晶硅层覆盖该第一多晶硅层,该第二多晶硅层掺杂有一第二导电型的掺杂物;
For this reason, polycrystalline silicon also must be of a very high purity.
这样多晶硅也必须是高纯的。
Finally, based on the simulated cell parameters, we designed a new SSP polycrystalline silicon thin film solar cell, and the specific process of the implementation process were discussed.
根据仿真所得电池参数,设计了一款SSP衬底多晶硅薄膜太阳能电池,探讨了工艺过程和条件。
A new method to improve the temperature dependence of polycrystalline silicon pressure sensor is presented.
提出了一种新的改善传感器温度特性的方法。
Influence of RF power on structure and optical properties of polycrystalline silicon thin film.
沉积功率对多晶硅薄膜结构和光学性质的影响。
In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。
In this paper some nowadays technology at home and aboard of polycrystalline silicon and the latest research and the development trend of the polycrystalline silicon was reviewed.
本文总结了当前国内外多晶硅的几种生产工艺,以及目前国内外多晶硅生产的最新研究和发展趋势。
The polycrystalline silicon(Poly-Si) films are widely used in energy sources and informational science field.
多晶硅薄膜材料已广泛应用于太阳能电池和集成电路制造等领域。
|polysilicon/multicrystal silicon;[晶体]多晶硅
多晶硅(Polycrystalline Silicon)是由大量微小硅晶体颗粒组成的非连续单晶结构材料,其晶体排列方向各异,晶粒尺寸通常在纳米至毫米级范围。该材料通过化学气相沉积(CVD)工艺制备,典型方法包括改良西门子法,将三氯氢硅(SiHCl₃)在高温下分解沉积形成硅锭,反应式为: $$ SiHCl_3 + H_2 xrightarrow{1100^circ C} Si + 3HCl $$ 在光伏领域,多晶硅电池占据全球太阳能组件市场约45%的份额(国际可再生能源机构2023年报)。其光电转换效率(18-20%)虽略低于单晶硅,但生产成本降低30%以上(美国国家可再生能源实验室数据)。半导体工业中,多晶硅作为栅极材料广泛应用于CMOS集成电路,其电阻率可通过掺杂磷或硼精准调控至0.001-1000 Ω·cm范围(IEEE电子器件学会技术报告)。晶界缺陷导致的载流子复合问题,目前通过氢钝化技术可将少子寿命提升至2ms以上(《先进功能材料》期刊最新研究)。
"Polycrystalline silicon"(多晶硅)是由多个微小硅晶体组成的硅材料。以下是详细解释:
多晶硅是单质硅的一种形态,由熔融硅在冷却过程中形成多个不同晶向的小晶体聚合而成。其表面呈现灰色金属光泽,常温下较脆,高温时化学性质活泼。
多晶硅是生产单晶硅的直接原料,但导电性略逊于单晶硅。两者的核心差异在于晶体结构:单晶硅为单一晶向,而多晶硅由多晶粒组成。
英文对应词为“polycrystalline silicon”或简称“polysilicon”,常见于光伏和半导体行业的专业文献。
如需进一步了解生产工艺或具体应用场景,可参考权威来源(如、2、6)。
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